Electronic Components Datasheet Search |
|
M39208-12WNB6T Datasheet(PDF) 2 Page - STMicroelectronics |
|
M39208-12WNB6T Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 30 page Symbol Parameter Value Unit TA Ambient Operating Temperature –40 to 85 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C VIO (2) Input or Output Voltages –0.6 to 5 V VCC Supply Voltage –0.6 to 5 V VA9, VG, VEF (2) A9, G, EF Voltage –0.6 to 13.5 V Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. Table 2. Absolute Maximum Ratings (1) An additional 64 bytes of EPROM are One Time Programmable. The M39208 EEPROM memory block may be writ- ten by byte or by page of 64 bytes and the integrity DESCRIPTION (Cont’d) A3 A0 DQ0 A7 A4 A13 A11 DQ7 A14 VSS G DQ5 DQ1 DQ2 DQ3 DQ4 DQ6 A17 W A16 A12 VCC A15 AI02587 M39208 8 1 9 16 17 24 25 32 A9 A10 A8 EF A6 A1 A5 A2 EE Figure 2. TSOP Pin Connections of the data can be secured with the help of the Software Data Protection (SDP). The M39208 Flash Memory block offers 4 sectors of 64 Kbytes, each sector may be erased individu- ally, and programmed Byte-by-Byte. Each sector can be separately protected and unprotected against program and erase. Sector erasure may be suspended, while data is read from other sectors of the Flash memory block (or EEPROM memory block), and then resumed. During a Program or Erase cycle in the Flash memory block or during a Write in the EEPROM memory block, the status of the M39208 internal logic can be read on the Data Outputs DQ7,DQ6, DQ5 and DQ3. PIN DESCRIPTION Address Inputs (A0-A17). The address inputs for the memory array are latched during a write opera- tion. A0-A12 access locations in the EEPROM memory block A0-A17 access locations in the Flash memory block. The memory block selected is given by the state on the EE and EF inputs respectively. When a specific voltage (VID) is applied on the A9 address input, additional specific areas can be accessed: Read the Manufacturer identifier, Read the Flash block identifier, Read/Write the EEPROM block identifier, Verify the Flash Sector Protection Status. Data Input/Output (DQ0-DQ7). A write operation inputs one byte which is latched when EE (or EF) and Write Enable W are driven active. Data read is valid when one Chip Enable (Chip Enable Flash or Chip Enable EEPROM) and Out- put Enable are driven active. The output is high 2/30 M39208 |
Similar Part No. - M39208-12WNB6T |
|
Similar Description - M39208-12WNB6T |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |