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M29W040-200K6R Datasheet(PDF) 5 Page - STMicroelectronics

Part # M29W040-200K6R
Description  4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W040-200K6R Datasheet(HTML) 5 Page - STMicroelectronics

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Mne.
Instr.
Cyc.
1st Cyc. 2nd Cyc. 3rd Cyc. 4th Cyc. 5th Cyc. 6th Cyc.
7th Cyc.
RST
(3,9)
Read Array/
Reset
1+
Addr.
(2,6)
X
Read Memory Array until a new write cycle is initiated.
Data
F0h
3+
Addr.
(2,6)
5555h
2AAAh
5555h
Read Memory Array until a new write
cycle is initiated.
Data
AAh
55h
F0h
RSIG
(3)
Read
Electronic
Signature
3+
Addr.
(2,6)
5555h
2AAAh
5555h
Read Electronic Signature until a new
write cycle is initiated. See Note 4.
Data
AAh
55h
90h
RBP
(3)
Read Block
Protection
3+
Addr.
(2,6)
5555h
2AAAh
5555h
Read Block Protection until a new write
cycle is initiated. See Note 5.
Data
AAh
55h
90h
PG
Program
4
Addr.
(2,6)
5555h
2AAAh
5555h
Program
Address Read Data Polling or Toggle Bit
until Program completes.
Data
AAh
55h
A0h
Program
Data
BE
Block Erase
6
Addr.
(2,6)
5555h
2AAAh
5555h
5555h
2AAAh
Block
Address
Additional
Block
(7)
Data
AAh
55h
80h
AAh
55h
30h
30h
CE
Chip Erase
6
Addr.
(2,6)
5555h
2AAAh
5555h
5555h
2AAAh
5555h
Note 8
Data
AAh
55h
80h
AAh
55h
10h
ES
Erase
Suspend
1
Addr.
(2,6)
X
Read until Toggle stops, then read all the data needed from any
uniform block(s) not being erased then Resume Erase.
Data
B0h
ER
Erase
Resume
1
Addr.
(2,6)
X
Read Data Polling or Toggle Bit until Erase completes or Erase
is suspended another time
Data
30h
PD
(10)
Power
Down
1
Addr.
(2,6)
5555h
Puts the memory in Power Down mode where power
consumption is reduced to typically less than 1
µA
Data
20h
Notes: 1. Command not interpreted in this table will default to read array mode.
2. X = Don’t Care.
3. The first cycle of the RST, RBP or RSIG instruction is followed by read operations to read memory array, Status Register or
Electronic Signature codes. Any number of read cycles can occur after one command cycle.
4. Signature Address bits A0, A1, A6 at VIL will output Manufacturer code (20h). Address bits A0 at VIH and A1, A6 at VIL will output
Device code.
5. Protection Address: A0, A6 at VIL,A1 at VIH and A16, A17, A18 within the uniform block to be checked, will output the
Block Protection status.
6. Address bits A15-A18 are don’t care for coded address inputs.
7. Optional, additional blocks addresses must be entered within a 80
µs delay after last write entry, timeout status can be verified
through DQ3 value. When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended.
8. Read Data Polling or Toggle bit until Erase completes.
9. A wait time of 5
µs is necessary after a Reset command, if the memory is in a Block Erase or Power Down status, before
starting any operation.
10. Writing an RST command to the P/E.C. is mandatory prior to any new operation when the memory is in Power Down mode.
Table 6. Instructions (1)
5/31
M29W040


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