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COMSET SEMICONDUCTORS
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2N3442
2N4347
NPN silicon transistors designed for applications in industrial and commercial equipment including high
fidelity audio amplifiers, series and shunts regulators and power switches.
•
Low Collector-Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347
•
Collector-Emitter Sustaining Voltage-
VCEO(sus) = 120 Vdc (Min) – 2N4347
140 Vdc (Min) – 2N3442
•
Excellent Second-Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
2N4347
120
VCEO
#Collector-Emitter Voltage
2N3442
140
V
2N4347
140
VCB
Collector-Base Voltage
2N3442
160
Vdc
2N4347
VEB
Emitter-Base Voltage
2N3442
7.0
Vdc
2N4347
5.0
Continuous
2N3442
10
2N4347
10
IC
Collector Current
Peak
2N3442
15 (**)
Adc
2N4347
3.0
Continuous
2N3442
7.0
2N4347
8.0
IB
Base Current
Peak
2N3442
-
Adc
2N4347
100
@ TC = 25°
2N3442
117
2N4347
0.57
PD
Total Device Dissipation
Derate
above 25°
2N3442
0.67
Watts
W/°C
2N4347
TJ
Junction Temperature
2N3442
°C
2N4347
TS
Storage Temperature
2N3442
-65 to +200
°C
(**) This data guaranteed in addition to JEDEC registered data.
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