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AD8197AASTZ-RL Datasheet(PDF) 5 Page - Analog Devices |
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AD8197AASTZ-RL Datasheet(HTML) 5 Page - Analog Devices |
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5 / 28 page  AD8197A Rev. 0 | Page 5 of 28 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating AVCC to AVEE 3.7 V DVCC to DVEE 3.7 V DVEE to AVEE ±0.3 V VTTI AVCC + 0.6 V VTTO AVCC + 0.6 V AMUXVCC 5.5 V Internal Power Dissipation 2.2 W High Speed Input Voltage AVCC − 1.4 V < VIN < AVCC + 0.6 V High Speed Differential Input Voltage 2.0 V Low Speed Input Voltage DVEE − 0.3 V < VIN < AMUXVCC + 0.6 V I2C and Parallel Logic Input Voltage DVEE − 0.3 V < VIN < DVCC + 0.6 V Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions: a device soldered in a 4-layer JEDEC circuit board for surface-mount packages. θJC is specified for no airflow. Table 3. Thermal Resistance Package Type θJA θJC Unit 100-Lead LQFP 56 19 °C/W MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD8197A is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. To ensure proper operation, it is necessary to observe the maximum power rating as determined by the coefficients in Table 3. ESD CAUTION |
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