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MRF6S18060NBR1 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc |
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MRF6S18060NBR1 Datasheet(HTML) 8 Page - Freescale Semiconductor, Inc |
8 / 20 page 8 RF Device Data Freescale Semiconductor MRF6S18060NR1 MRF6S18060NBR1 TYPICAL CHARACTERISTICS 210 1.E+09 90 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. 100 110 120 130 140 150 160 170 180 1.E+08 1.E+06 1.E+07 Figure 13. MTTF Factor versus Junction Temperature 200 190 GSM TEST SIGNAL Figure 14. EDGE Spectrum −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 200 kHz Span 2 MHz Center 1.96 GHz −110 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz |
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