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M29W010B90K1T Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W010B90K1T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 19 page 1/19 September 2005 M29W010B 1 Mbit (128Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory ■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits ■ ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend ■ UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming ■ LOW POWER CONSUMPTION – Standby and Automatic Standby ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ■ 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 23h ■ ECOPACK® PACKAGES AVAILABLE TSOP32 (N) 8 x 20mm PLCC32 (K) Figure 1. Logic Diagram AI02747 17 A0-A16 W DQ0-DQ7 VCC M29W010B E VSS 8 G |
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