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M29W512B120K1T Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W512B120K1T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 18 page 1/18 March 2000 M29W512B 512 Kbit (64Kb x8, Bulk) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 55ns s PROGRAMMING TIME – 10µs per Byte typical s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Chip Erase algorithm – Status Register Polling and Toggle Bits s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 27h TSOP32 (NZ) 8 x 14mm PLCC32 (K) Figure 1. Logic Diagram AI02743 16 A0-A15 W DQ0-DQ7 VCC M29W512B E VSS 8 G |
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