M29W040-120K6TR datasheet(9/31 Pages) STMICROELECTRONICS

Part #	M29W040-120K6TR

Description	4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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9 / 31 page

AI01417

3V

0V

1.5V

Figure 4. AC Testing Input Output Waveform

AI01968

0.8V

OUT

CL = 30pF or 100pF

CL includes JIG capacitance

3.3k

Ω

1N914

DEVICE

UNDER

TEST

Figure 5. AC Testing Load Circuit

Symbol

Parameter

Test Condition

Min

Max

Unit

CIN

Input Capacitance

VIN =0V

6

pF

COUT

Output Capacitance

VOUT =0V

12

pF

Note: 1. Sampled only, not 100% tested.

Table 10. Capacitance (1) (TA =25

°C, f = 1 MHz )

Input Rise and Fall Times

≤ 10ns

Input Pulse Voltages

0 to 3V

Input and Output Timing Ref. Voltages

1.5V

Table 9. AC Measurement Conditions

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

0V

≤ VIN ≤ VCC

±1

µA

ILO

Output Leakage Current

0V

≤ VOUT ≤ VCC

±1

µA

ICC1

Supply Current (Read)

E = VIL,G = VIH, f = 6MHz

20

mA

ICC2

Supply Current (Standby) TTL

E = VIH

0.2

mA

ICC3

Supply Current (Standby) CMOS

E = VCC

± 0.2V

50

µA

ICC4

Supply Current (Program or Erase)

Byte Program,

Block Erase

20

mA

ICC5

Supply Current

Chip Erase in progress

40

mA

ICC6

Power Down Current

E = VCC

± 0.2V

5

µA

VIL

Input Low Voltage

–0.5

0.8

V

VIH

Input High Voltage

0.7 VCC

VCC + 0.5

V

VOL

Output Low Voltage

IOL = 2mA

0.45

V

VOH

Output High Voltage CMOS

IOH = –100

µAVCC –0.4

V

IOH = –2.0mA

0.85 VCC

V

VID

A9 Voltage (Electronic Signature)

11.5

12.5

V

IID

A9 Current (Electronic Signature)

A9 = VID

50

µA

VLKO

Supply Voltage (Erase and

Program lock-out)

1.9

2.2

V

Table 11. DC Characteristics

(TA = 0 to 70

°C, –20 to 85°C or –40 to 85°C; VCC = 2.7V to 3.6V)

9/31

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