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M29W008B-100N6TR Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W008B-100N6TR Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 30 page  AI02189 20 A0-A19 W DQ0-DQ7 VCC M29W008T M29W008B E VSS 8 G RP RB Figure 1. Logic Diagram M29W008T M29W008B 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W008T and M29W008B are replaced respectively by the M29W008AT and M29W008AB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10 µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code, M29W008T: D2h – Device Code, M29W008B: DCh DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against pro- graming and erase on programming equipment, and temporarily unprotected to make changes in June 1999 1/30 This is information on a product still in production but not recommended for new designs. TSOP40 (N) 10 x 20 mm |
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