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M29W004BT55N6T Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W004BT55N6T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 20 page 1/20 March 2000 M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 55ns s PROGRAMMING TIME – 10µs by Byte typical s 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s TEMPORARY BLOCK UNPROTECTION MODE s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29W004BT: EAh – Bottom Device Code M29W004BB: EBh TSOP40 (N) 10 x 20mm Figure 1. Logic Diagram AI02954 19 A0-A18 W DQ0-DQ7 VCC M29W004BT M29W004BB E VSS 8 G RP RB |
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