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M29F200BT90N1T Datasheet(PDF) 8 Page - STMicroelectronics |
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M29F200BT90N1T Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 22 page  M29F200BT, M29F200BB 8/22 The Block Protection Status of each block can be read using a Bus Read operation with A0 = VIL, A1 = VIH, and A12-A16 specifying the address of the block. The other address bits may be set to ei- ther VIL or VIH. If the addressed block is protect- ed then 01h is output on Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output. Program Command. The Program command can be used to program a value to one address in the memory array at a time. The command re- quires four Bus Write operations, the final write op- eration latches the address and data in the internal state machine and starts the Program/Erase Con- troller. If the address falls in a protected block then the Program command is ignored, the data remains unchanged. The Status Register is never read and no error condition is given. During the program operation the memory will ig- nore all commands. It is not possible to issue any command to abort or pause the operation. Typical program times are given in Table 6. Bus Read op- erations during the program operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the program operation has completed the memory will return to the Read mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Regis- ter. A Read/Reset command must be issued to re- set the error condition and return to Read mode. Note that the Program command cannot change a bit set at ’0’ back to ’1’ and attempting to do so will cause an error. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. Unlock Bypass Command. The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memo- ry. When the access time to the device is long (as with some EPROM programmers) considerable time saving can be made by using these com- mands. Three Bus Write operations are required to issue the Unlock Bypass command. Once the Unlock Bypass command has been is- sued the memory will only accept the Unlock By- pass Program command and the Unlock Bypass Reset command. The memory can be read as if in Read mode. Unlock Bypass Program Command. The Un- lock Bypass Program command can be used to program one address in memory at a time. The command requires two Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Pro- gram/Erase Controller. The Program operation using the Unlock Bypass Program command behaves identically to the Pro- gram operation using the Program command. A protected block cannot be programmed; the oper- ation cannot be aborted and the Status Register is read. Errors must be reset using the Read/Reset command, which leaves the device in Unlock By- pass Mode. See the Program command for details on the behavior. Table 6. Program, Erase Times and Program, Erase Endurance Cycles (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C) Note: 1. TA =25°C, VCC =5V. Parameter Min Typ (1) Typical after 100k W/E Cycles (1) Max Unit Chip Erase (All bits in the memory set to ‘0’) 0.8 0.8 sec Chip Erase 2.5 2.5 10 sec Block Erase (64 Kbytes) 0.6 0.6 4 sec Program (Byte or Word) 8 8 150 µs Chip Program (Byte by Byte) 2.3 2.3 9 sec Chip Program (Word by Word) 1.2 1.2 4.5 sec Program/Erase Cycles (per Block) 100,000 cycles |
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