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SI7366DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7366DP Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 72296 S-80440-Rev. C, 03-Mar-08 www.vishay.com 3 Vishay Siliconix Si7366DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.003 0.006 0.009 0.012 0.015 0 1020304050 VGS = 4.5 V I D - Drain Current (A) VGS = 10 V 0 1 2 3 4 5 6 0 3 6 9 12 15 18 21 VDS = 10 V ID = 20 A Qg - Total Gate Charge (nC) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 600 1200 1800 2400 3000 048 12 16 20 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 20 A TJ - Junction Temperature (°C) 0.000 0.006 0.012 0.018 0.024 0.030 02468 10 ID = 20 A VGS - Gate-to-Source Voltage (V) |
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