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RSB12Z Datasheet(PDF) 1 Page - Rohm |
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RSB12Z Datasheet(HTML) 1 Page - Rohm |
1 / 3 page RSB12Z Diodes 1/2 Low Capacitance Protection Device RSB12Z Application ESD Protection Features 1) Ultra small mold type. (VMD3) 2) Low capacitance 3) Bi direction Construction Silicon Epitaxial Planar Absolute maximum ratings (Ta=25 °C) Symbol Unit PmW Tj ℃ Tstg ℃ Limits Parameter Power dissipation 150 Junction temperature Storage temperature 150 -55 to +150 Electrical characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Conditions Zener voltage VZ 9.6 - 14.4 V IZ=5mA Reverse current IR -- 0.10 µA VR=9V Ct -1 - pF f=1MHz,VR=0V Capacitance between terminals Parameter Dimensions (Unit : mm) Land size figure (Unit : mm) Structure ROHM : VMD3 dot(year week factory) 0.5±0.05 0.13±0.05 0.22±0.05 (3) 1.2±0.1 0.4 0.4 (1) (2) 0.22±0.05 0.32±0.05 0~0.1 VMD3 0.4 0.4 0.8 0.5 Taping specifications (Unit : mm) 1.3±0.05 0 (4.0±0.1) 4.0±0.07 2.0±0.04 φ1.55±0.05 0.3±0.1 0.6±0.05 0 φ0.5±0.05 2.0±0.05 |
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