UPD43256BGW-A85-9KL-A datasheet(1/28 Pages) NEC

Part #	UPD43256BGW-A85-9KL-A

Description	256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

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MOS INTEGRATED CIRCUIT

μPD43256B

256K-BIT CMOS STATIC RAM

32K-WORD BY 8-BIT

DATA SHEET

Document No. M10770EJEV0DS00 (14th edition)

Date Published June 2006 NS CP (K)

Printed in Japan

1990, 1993, 1994

Description

The

μPD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available. And A and B versions are wide voltage operations.

The

μPD43256B is packed in 28-pin PLASTIC DIP, 28-pin PLASTIC SOP and 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).

Features

• 32,768 words by 8 bits organization

• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)

• Low VCC data retention: 2.0 V (MIN.)

• /OE input for easy application

Part number

Access time

Operating supply Operating ambient

Supply current

ns (MAX.)

voltage

temperature

At operating

At standby

At data retention

V

°C

mA (MAX.)

μA (MAX.)

μA (MAX.) Note1

μPD43256B-xxL

70, 85

4.5 to 5.5

0 to 70

45

50

3

μPD43256B-xxLL

15

2

μPD43256B-Axx

85, 100

Note2, 120 Note2

3.0 to 5.5

μPD43256B-Bxx Note2

100, 120, 150

2.7 to 5.5

Notes 1. TA

≤ 40 °C, VCC = 3.0 V

2. Access time: 85 ns (MAX.) (VCC = 4.5 to 5.5 V)

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UPD43256BGW-A85-9KL-A Datasheet(PDF) 1 Page - NEC

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