EM620FV16B Series
Low Power, 128Kx16 SRAM
5
DC AND OPERATING CHARACTERISTICS
NOTES
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCC
-1
-
1
uA
Output leakage current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH
VIO=VSS to VCC
-1
-
1
uA
Operating power supply
ICC
IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL
-
-
3
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, IIO=0mA,
CS1<0.2V, LB<0.2V or/and UB<0.2V, CS2>VCC-0.2V,
VIN<0.2V or VIN>VCC-0.2V
-
-
3
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL ,
VIN=VIL or VIH
45ns
-
-
35
mA
55ns
-
-
30
70ns
-
-
25
Output low voltage
VOL
IOL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.4
-
-
V
Standby Current (TTL)
ISB
CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
-
-
0.3
mA
Standby Current (CMOS)
ISB1
CS1>VCC-0.2V, CS2>VCC-0.2V (CS1 controlled)
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~VCC
(Typ. condition : VCC=3.3V @ 25oC)
(Max. condition : VCC=3.6V @ 85oC)
LF
-
11)
10
uA
RECOMMENDED DC OPERATING CONDITIONS 1)
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.7
3.3
3.6
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
2.2
-
VCC + 0.22)
V
Input low voltage
VIL
-0.23)
-
0.6
V
CAPACITANCE1) (f =1MHz, TA=25oC)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO=0V
-
10
pF