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2N60LL-A-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N60LL-A-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 2N60L Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-182,A ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 2N60L-A 600 V Drain-Source Voltage 2N60L-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 2.0 A TC = 25°C 2.0 A Drain Current Continuous TC = 100°C ID 1.26 A Drain Current Pulsed (Note 1) IDP 8.0 A Single Pulsed (Note 2) EAS 140 mJ Avalanche Energy Repetitive (Note 1) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 32 W TO-220F 9 W TO-251 25 W Total Power Dissipation TO-252 PD 20 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT TO-251 65 TO-252 58 TO-220 43 Thermal Resistance Junction-Ambient TO-220F θJA 38 TO-251 5 TO-252 6 TO-220 4 Thermal Resistance Junction-Case TO-220F θJc 12 ℃ /W ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 2N60L-A 600 V Drain-Source Breakdown Voltage 2N60L-B BVDSS VGS = 0V, ID = 250µA 650 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 µA Forward VGS = 30V, VDS = 0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/T △ J ID = 250 µA, Referenced to 25°C 0.4 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 3.8 5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 270 350 pF Output Capacitance COSS 40 50 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V, f =1MHz 5 7 pF |
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