512Kx8 LP SRAM EM6112K800V Series

4

DCC-SR-041005-A

ABSOLUTE MAXIMUN RATINGS*

PARAMETER

SYMBOL

RATING

UNIT

Terminal Voltage with Respect to Vss

-0.5 to 4.6

V

0 to 70(C grade)

-20 to 80(E grade)

Operating Temperature

-40 to 85(I grade)

°C

Storage Temperature

-65 to 150

°C

Power Dissipation

1

W

DC Output Current

50

mA

Soldering Temperature (under 10 sec)

260

°C

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device

reliability.

TRUTH TABLE

MODE

CE#

OE#

WE#

I/O OPERATION

SUPPLY CURRENT

Standby

H

X

X

High-Z

Output Disable

L

H

H

High-Z

Read

L

L

H

Write

L

X

L

Note: H = VIH, L = VIL, X = Don't care.

DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL TEST CONDITION

MIN.

MAX.

UNIT

Supply Voltage

Vcc

2.7

3.0

3.6

V

Input High Voltage

2.0

-

Vcc+

0.3

V

Input Low Voltage

-0.2

-

0.6

V

Input Leakage

Current

-1

-

+1

µA

Output Leakage

Current

Output Disabled

-1

-

1

µA

Output High

Voltage

2.2

2.7

-

V

Output Low

Voltage

-

-

0.4

V

-45

-

40

50

mA

-55

-

30

40

mA

Cycle time = Min.

-70

-

20

30

mA

Average Operating

Power supply

Current

Cycle time = 1µs

-

4

5

mA

-

0.3

0.5

mA

-L

-

20

80

µA

Standby Power

Supply Current

-LL

2

15

µA

Notes:

1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.

2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.

3. Over/Undershoot specifications are characterized, not 100% tested.

4. 10µA for special request

5. Typical values are included for reference only and are not guaranteed or tested.

Typical valued are measured at VCC = VCC(TYP.) and TA = 25°C