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EM6112K800TPA-55IF Datasheet(PDF) 7 Page - Eorex Corporation |
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EM6112K800TPA-55IF Datasheet(HTML) 7 Page - Eorex Corporation |
7 / 13 page 512Kx8 LP SRAM EM6112K800V Series 7 DCC-SR-041005-A WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) Notes : 1. WE#, CE# must be high during all address transitions. 2. A write occurs during the overlap of a low CE#, low WE#. 3. During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4. During this period, I/O pins are in the output state, and input signals must not be applied. 5. If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6. tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. High-Z tAS tWR High-Z tCW Address tWC CE# WE# Dout Valid Data Din tAW tWP tWHZ tDW tDH (4) (4) High-Z tCW Address tWC CE# WE# Dout Valid Data Din tAW tAS tWP tWR tWHZ tOW tDW tDH |
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