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EM482M3244VBA-7FE Datasheet(PDF) 4 Page - Eorex Corporation

Part # EM482M3244VBA-7FE
Description  128Mb (1M횞4Bank횞32) Synchronous DRAM
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Manufacturer  EOREX [Eorex Corporation]
Direct Link  http://www.eorex.com
Logo EOREX - Eorex Corporation

EM482M3244VBA-7FE Datasheet(HTML) 4 Page - Eorex Corporation

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eorex
EM484M3244VBA
Jul. 2006
www.eorex.com
Absolute Maximum Rating
Symbol
Item
Rating
Units
VIN, VOUT
Input, Output Voltage
-0.5 ~ +4.6
V
VDD, VDDQ
Power Supply Voltage
-0.5 ~ +4.6
V
Commercial
0 ~ +70
TOP
Operating Temperature Range
Extended
-25 ~ +85
°C
TSTG
Storage Temperature Range
-55 ~ +150
°C
PD
Power Dissipation
1
W
IOS
Short Circuit Current
50
mA
Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could
cause permanent damage. The device is not meant to be operated under conditions outside the
limits described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Capacitance (VCC=3.3V, f=1MHz, TA=25°C)
Symbol
Parameter
Min.
Typ.
Max.
Units
CCLK
Clock Capacitance
1.5
3.0
pF
CI
Input Capacitance for CLK, CKE, Address,
/CS, /RAS, /CAS, /WE, DQML, DQMU
1.5
3.0
pF
CO
Input/Output Capacitance
3.0
5.5
pF
Recommended DC Operating Conditions (TA=0°C ~70°C)
Symbol
Parameter
Min.
Typ.
Max.
Units
VDD
Power Supply Voltage
3.0
3.3
3.6
V
VDDQ
Power Supply Voltage (for I/O Buffer)
3.0
3.3
3.6
V
VIH
Input Logic High Voltage
2.0
VDD+0.3
V
VIL
Input Logic Low Voltage
-0.3
0.8
V
Note: * All voltages referred to VSS.
* VIH (max.) = 5.6V for pulse width 3ns
* VIL (min.) = -2.0V for pulse width 3ns
4/17


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