eorex

EM484M3244VBA

Jul. 2006

www.eorex.com

128Mb (1M

Features

• Fully Synchronous to Positive Clock Edge

• Single 3.3V

±0.3V Power Supply

• LVTTL Compatible with Multiplexed Address

• Programmable Burst Length (B/L) - 1, 2, 4, 8

or Full Page

• Programmable CAS Latency (C/L) - 2 or 3

• Data Mask (DQM) for Read / Write Masking

• Programmable Wrap Sequence

– Sequential (B/L = 1/2/4/8/full Page)

– Interleave (B/L = 1/2/4/8)

• Burst Read with Single-bit Write Operation

• All Inputs are Sampled at the Rising Edge of

the System Clock

• Auto Refresh and Self Refresh

• 4,096 Refresh Cycles / 64ms (15.625us)

Description

The EM484M3244VBA is Synchronous Dynamic

Random Access Memory (SDRAM) organized as

1Meg words x 4 banks by 32 bits. All inputs and

outputs are synchronized with the positive edge of

the clock.

The 128Mb SDRAM uses synchronized pipelined

architecture to achieve high speed data transfer

rates and is designed to operate at 3.3V low power

memory system. It also provides auto refresh with

power saving / down mode. All inputs and outputs

voltage levels are compatible with LVTTL.

Available packages: TFBGA-90B(13mmx8mm).

Ordering Information

Part No

Organization

Max. Freq

Package

Grade

Pb

EM484M3244VBA-75F

4M X 32

133MHz @CL3

TFBGA -90B

Commercial

Free

* EOREX reserves the right to change products or specification without notice.

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