ZXT12P40DX_06 datasheet(4/7 Pages) ZETEX

Part #	ZXT12P40DX

Description	SuperSOT4??DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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4 / 7 page

ISSUE

2 - DECEMBER 2006

ZXT12P40DX

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-50

-95

V

IC=-100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

-40

-80

V

IC=-10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

-7.5

-8.5

V

IE=-100 A

Collector Cut-Off Current

ICBO

-100

nA

VCB=-40V

Emitter Cut-Off Current

IEBO

-100

nA

VEB=-6V

Collector Emitter Cut-Off Current

ICES

-100

nA

VCES=-40V

Collector-Emitter Saturation

Voltage

VCE(sat)

-18

-155

-190

-150

-22

-215

-260

-190

mV

IC=-0.1A, IB=-10mA*

IC=-1A, IB=-20mA*

IC=-2A, IB=-100mA*

IC=-2A, IB=-200mA*

Base-Emitter Saturation Voltage

VBE(sat)

-0.92

-1.0

V

IC=-2A, IB=-100mA*

Base-Emitter Turn-On Voltage

VBE(on)

-0.80

-0.85

V

IC=-2A, VCE=-2V*

Static Forward Current Transfer

Ratio

hFE

300

150

10

450

300

25

900

IC=-10mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-5A, VCE=-2V*

Transition Frequency

fT

130

MHz

IC=-30mA, VCE=-10V

f=-50MHz

Output Capacitance

Cobo

35

pF

VCB=-10V, f=1MHz

Turn-On Time

t(on)

97

ns

VCC=-10V, IC=-1A

IB1=IB2=-20mA

Turn-Off Time

t(off)

640

ns

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

4

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