64Kx16 LP SRAM EM6164K600V Series

1

DCC-SR-041002-A

GENERAL DESCRIPTION

The EM6164K600V is a 1,048,576-bit low power CMOS static random access memory organized as

65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

The EM6164K600V is well designed for low power application, and particularly well suited for battery

back-up nonvolatile memory application.

The EM6164K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are

fully TTL compatible

FEATURES

Fast access time: 45/55/70ns

Low power consumption:

Operating current:

23/20/18mA (TYP.)

Standby current: -L/-LL version

10/1µA (TYP.)

Single 2.7V ~ 3.6V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control :

LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

Data retention voltage: 1.5V (MIN.)

Package:

44-pin 400 mil TSOP-II

48-ball 6mm x 8mm TFBGA

FUNCTIONAL BLOCK DIAGRAM

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A15

Address Inputs

DQ0 – DQ15

Data Inputs/Outputs

CE#

Chip Enable Input

WE#

Write Enable Input

OE#

Output Enable Input

LB#

Lower Byte Control

UB#

Upper Byte Control

Vcc

Power Supply

Vss

Ground

I/O DATA

CURCUIT

COLUMN I/O

CONTROL

CIRCUIT

Vcc

Vss

A0-A15

DQ0-DQ7

Lower Byte

DQ8-DQ15

Upper Byte

CE#

WE#

OE#

LB#

UB#

DECODER

64Kx16

MEMORY

ARRAY