STP30NM30N datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STP30NM30N

Description	N-channel 300V - 0.078廓 - 30A - TO-220 Ultra low gate charge MDmesh??II Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STP30NM30N

4/12

2

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS = 0

300

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125°C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250µA

2

3

4

V

RDS(on

Static drain-source on

resistance

VGS = 10V, ID = 15A

0.075

0.090

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 15V, ID = 15A

9

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50V, f = 1 MHz, VGS = 0

2500

500

70

pF

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20mV

open drain

1.7

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 240V, ID = 30A,

VGS = 10V

(see Figure 13)

75

15

40

nC

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