SI2303BDS_08 datasheet(4/6 Pages) SUMIDA

Part #	SI2303BDS

Description	P-Channel 30-V (D-S) MOSFET

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Document Number: 72065

S-80642-Rev. C, 24-Mar-08

Vishay Siliconix

Si2303BDS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

10

0.1

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

1

- 0.6

- 0.3

0.0

0.3

0.6

0.9

- 50

- 25

0

25

50

75

100

125

150

TJ - Temperature (°C)

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.0

0.2

0.4

0.6

0.8

1.0

0

2468

10

VGS - Gate-to-Source Voltage (V)

ID = 1.7 A

Time (s)

TA = 25 °C

10

8

6

4

2

0

0.01

0.1

1

10

100

1000

Safe Operating Area, Junction-to-Case

Square Wave Pulse Duration (s)

VDS - Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

0.1

Limited

by RDS(on)*

TA = 25 °C

Single Pulse

10 ms

100 ms

10 µs

100 µs

1 ms

DC, 100 s, 10 s, 1 s

* VGS > minimum VGS at which RDS(on) is specified

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