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RA55H3340M-101 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # RA55H3340M-101
Description  330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA55H3340M-101 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MODULE
RA55H3340M
RA55H3340M
MITSUBISHI ELECTRIC
18 July 2007
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<5V
17
V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW
6
V
Pin
Input Power
100
mW
Pout
Output Power
f=330-400MHz,
ZG=ZL=50Ω
65
W
Tcase(OP)
Operation Case Temperature Range
-30 to +110
°C
Tstg
Storage Temperature Range
-40 to +110
°C
Note.1.The above parameters are independently guaranteed.
Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
330
400
MHz
Pout
Output Power
55
W
η
T
Total Efficiency
35
%
2fo
2
nd Harmonic
-50
dBc
ρ
in
Input VSWR
3:1
IGG
Gate Current
VDD=12.5V
VGG=5V
Pin=50mW
1
mA
Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<65W (VGG control), Load VSWR=3:1
No parasitic oscillation
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=55W (VGG control),
Load VSWR=20:1
No degradation or
destroy
Note. All parameters, conditions, ratings, and limits are subject to change without notice.


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