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RA55H3340M-101 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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RA55H3340M-101 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 9 page MITSUBISHI RF POWER MODULE RA55H3340M RA55H3340M MITSUBISHI ELECTRIC 18 July 2007 2/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V 17 V VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V Pin Input Power 100 mW Pout Output Power f=330-400MHz, ZG=ZL=50Ω 65 W Tcase(OP) Operation Case Temperature Range -30 to +110 °C Tstg Storage Temperature Range -40 to +110 °C Note.1.The above parameters are independently guaranteed. Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 330 400 MHz Pout Output Power 55 W η T Total Efficiency 35 % 2fo 2 nd Harmonic -50 dBc ρ in Input VSWR 3:1 — IGG Gate Current VDD=12.5V VGG=5V Pin=50mW 1 mA — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<65W (VGG control), Load VSWR=3:1 No parasitic oscillation — — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=55W (VGG control), Load VSWR=20:1 No degradation or destroy — Note. All parameters, conditions, ratings, and limits are subject to change without notice. |
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