NAND08GW3C4AZL6F datasheet(1/58 Pages) NUMONYX

Part #	NAND08GW3C4AZL6F

Description	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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1 / 58 page

January 2008

Rev 2

1/58

1

NAND08GW3C2A

NAND16GW3C4A

8/16 Gbit, 2112 byte page,

3 V supply, multilevel, multiplane, NAND Flash memory

Features

■

High density multilevel cell (MLC) Flash

memory

– Up to 16 Gbit memory array

– Up to 512 Mbit spare area

– Cost-effective solutions for mass storage

applications

■

NAND interface

– x 8 bus width

– Multiplexed address/data

■

Supply voltage: VDD = 2.7 to 3.6 V

■

Page size: (2048 + 64 spare) bytes

■

Block size: (256K + 8K spare) bytes

■

Multiplane architecture

– Array split into two independent planes

– Program/erase operations can be

performed on both planes at the same time

■

Page read/program

– Random access: 60 µs (max)

– Sequential access: 25 ns (min)

– Page program operation time: 800 µs (typ)

■

Multipage program time (2 pages): 800 µs (typ)

■

Fast block erase

– Block erase time: 2.5 ms (typ)

■

Multiblock erase time (2 blocks): 2.5 ms (typ)

■

Status register

■

Electronic signature

■

Serial number option

■

Chip enable ‘don’t care’

■

Data protection

– Hardware program/erase locked during

power transitions

■

Development tools

– Error correction code models

– Bad block management and wear leveling

algorithm

– HW simulation models

■

Data integrity

– 10,000 program/erase cycles (with ECC)

– 10 years data retention

■

ECOPACK® packages available

LGA52 12 x 17 mm (N)

TSOP48 12 x 20 mm (N)

www.numonyx.com

Similar Part No. - NAND08GW3C4AZL6F

Manufacturer	Part #	Datasheet	Description
Numonyx B.V	NAND08GW3C4BN1E	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND08GW3C4BN1F	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND08GW3C4BN6E	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND08GW3C4BN6F	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND08GW3C4BZL1E	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory

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