PAGE
2/5
4. Absolute Maximum Rating
Forward Current
Forward Current
Forward Current
Forward Current
Pulse Forward Current
Pulse Forward Current
Pulse Forward Current
Pulse Forward Current 1)
1)
1)
1)
Reverse Voltage
Reverse Voltage
Reverse Voltage
Reverse Voltage
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
If
If
If
If
Ifp
Ifp
Ifp
Ifp
Vr
Vr
Vr
Vr
Condition
Condition
Condition
Condition
30
30
30
30
Unit
Unit
Unit
Unit
mA
mA
mA
mA
V
V
V
V
5
5
5
5
Power Dissipation
Power Dissipation
Power Dissipation
Power Dissipation
mW
mW
mW
mW
Pd
Pd
Pd
Pd
120
120
120
120
Operating Temperature
Operating Temperature
Operating Temperature
Operating Temperature
Topr
Topr
Topr
Topr
℃
℃
℃
℃
-
-
-
-30 ~ +80
30 ~ +80
30 ~ +80
30 ~ +80
100
100
100
100
Tstg
Tstg
Tstg
Tstg
-
-
-
-40 ~ +100
40 ~ +100
40 ~ +100
40 ~ +100
3.
3.
3.
3. Chip
Chip
Chip
Chip’s Physical Structure :
s Physical Structure :
s Physical Structure :
s Physical Structure :
Substrate
Substrate
Substrate
Substrate
Sapphire
Sapphire
Sapphire
Sapphire
Chip Characteristics
Chip Characteristics
Chip Characteristics
Chip Characteristics
Orientation
Orientation
Orientation
Orientation
(0001)
(0001)
(0001)
(0001)
±
±
±
±0.5
0.5
0.5
0.5
˚
˚
˚
˚c
c
c
c-
-
-
-plane
plane
plane
plane
Chip size
0.375 x 0.330
Chip size
0.375 x 0.330
Chip size
0.375 x 0.330
Chip size
0.375 x 0.330
±
±
±
±0.03mm
0.03mm
0.03mm
0.03mm
Thickness
Thickness
Thickness
Thickness
80
80
80
80
±
±
±
± 20
20
20
20
㎛
㎛
㎛
㎛
5. Electro-Optical Characteristics :
Forward Voltage
Forward Voltage
Forward Voltage
Forward Voltage
Reverse current
Reverse current
Reverse current
Reverse current
Dominant Wavelength
Dominant Wavelength
Dominant Wavelength
Dominant Wavelength
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Vf
Vf
Vf
Vf
Ir
Ir
Ir
Ir
Wp
Wp
Wp
Wp
Condition
Condition
Condition
Condition
If = 20mA
If = 20mA
If = 20mA
If = 20mA
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
390
V
V
V
V
μ
μ
μ
μA
A
A
A
nm
nm
nm
nm
If = 20mA
If = 20mA
If = 20mA
If = 20mA
((((Ta=25
Ta=25
Ta=25
Ta=25
℃
℃
℃
℃))))
(1)
(1)
(1)
(1) Luminous Intensity is measured by
Luminous Intensity is measured by
Luminous Intensity is measured by
Luminous Intensity is measured by
equipment on bare chip. However, the electrical
equipment on bare chip. However, the electrical
equipment on bare chip. However, the electrical
and optical characteristics on lamps made from our chips is
and optical characteristics on lamps made from our chips is
and optical characteristics on lamps made from our chips is
and optical characteristics on lamps made from our chips is not guaranteed.
not guaranteed.
not guaranteed.
not guaranteed.
10
10
10
10
405
Luminous Intensity
Luminous Intensity
Luminous Intensity
Luminous Intensity (1)
(1)
(1)
(1)
Iv
Iv
Iv
Iv
mW
mW
mW
mW
If = 20mA
If = 20mA
If = 20mA
If = 20mA
Vr
Vr
Vr
Vr = 5.0 V
= 5.0 V
= 5.0 V
= 5.0 V
mA
mA
mA
mA
Storage Temperature
Storage Temperature
Storage Temperature
Storage Temperature
℃
℃
℃
℃
1)
1)
1)
1) Pulse Width<10msec, Duty<1/10
Pulse Width<10msec, Duty<1/10
Pulse Width<10msec, Duty<1/10
Pulse Width<10msec, Duty<1/10
A
MODEL
LEUV-C31A
2.0
2.0
2.0
2.0
4.0
4.0
4.0
4.0
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