NAND01GR4B2CN6F datasheet(8/60 Pages) NUMONYX

Part #	NAND01GR4B2CN6F

Description	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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8 / 60 page

Description

NAND01G-B2B, NAND02G-B2C

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Figure 1.

Logic block diagram

Table 2.

Product description

Reference

Part number

Density

Bus

width

Page

size

Block

size

Memory

array

Operating

voltage

Timings

Package

Random

access

time

(max)

Sequential

access

time

(min)

Page

Progra

m time

(typ)

Bloc

k

erase

(typ)

NAND01G

-B2B

NAND01GR3B2B

1Gbit

x8

2048

+64

bytes

128K

+4K

bytes

64

pages x

1024

blocks

1.7 to

1.95 V

25 µs

50 ns

200 µs

2ms

VFBGA63

9x11 mm

NAND01GW3B2B

2.7 to

3.6 V

25 µs

30 ns

TSOP48

NAND01GR4B2B

x16

1024

+32

words

64K+

2K

words

1.7 to

1.95 V

25 µs

50 ns

(1)

NAND01GW4B2B

2.7 to

3.6 V

25 µs

30 ns

(1)

NAND02G

-B2C

NAND02GR3B2C

2Gbits

x8

2048

+64

bytes

128K

+4K

bytes

64

pages x

2048

blocks

1.7 to

1.95 V

25 µs

50 ns

2ms

VFBGA63

9.5 x 12 m

m

NAND02GW3B2C

2.7 to

3.6 V

25 µs

30 ns

TSOP48

NAND02GR4B2C

x16

1024

+32

words

64K+

2K

words

1.7 to

1.95 V

25 µs

50 ns

(1)

NAND02GW4B2C

2.7 to

3.6 V

25 µs

30 ns

(1)

1.

x16 organization only available for MCP.

Address

register/counter

Command

interface

logic

P/E/R controller,

high voltage

generator

WP

I/O buffers & latches

I/O8-I/O15, x16

E

W

AI12799

R

Y decoder

Page buffer

NAND flash

memory array

I/O0-I/O7, x8/x16

Command register

CL

AL

Cache register

RB

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STMicroelectronics	NAND01GR4B2CN6F	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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Similar Description - NAND01GR4B2CN6F

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	NAND01G-B	631Kb / 64P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
STMicroelectronics	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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