M58WR016QT80ZB6E datasheet(1/110 Pages) NUMONYX

Part #	M58WR016QT80ZB6E

Description	16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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1 / 110 page

November 2007

Rev 2

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1

M58WR016QT M58WR016QB

M58WR032QT M58WR032QB

16 Mbit and 32 Mbit (x16, Multiple Bank, Burst)

1.8V supply Flash memories

Feature summary

■ Supply voltage

–VDD = 1.7V to 2V for Program, Erase and

Read

–VDDQ = 1.7V to 2.24V for I/O Buffers

–VPP = 12V for fast Program (optional)

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 66MHz

– Asynchronous/ Synchronous Page Read

mode

– Random access: 60ns, 70ns, 80ns

■ Synchronous Burst Read Suspend

■ Programming time

– 8µs by Word typical for Fast Factory

Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ Memory blocks

– Multiple Bank memory array: 4 Mbit Banks

– Parameter blocks (top or bottom location)

■ Dual operations

– Program Erase in one bank while Read in

others

– No delay between Read and Write

operations

■ Block locking

– All blocks locked at Power up

– Any combination of blocks can be locked

–WP for Block Lock-Down

■ Security

– 128 bit user programmable OTP cells

– 64 bit unique device number

■ Common Flash Interface (CFI)

■ 100,000 program/erase cycles per block

■ Electronic signature

– Manufacturer Code: 20h

– Device Codes:

M58WR016QT (Top): 8812h.

M58WR016QB (Bottom): 8813h

M58WR032QT (Top): 8814h

M58WR032QB (Bottom): 8815h

■ ECOPACK® package available

FBGA

VFBGA56 (ZB)

7.7 x 9 mm

www.numonyx.com

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M58WR016QT80ZB6E Datasheet(PDF) 1 Page - Numonyx B.V

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