2SC6026MFV datasheet(3/4 Pages) TOSHIBA

Part #	2SC6026MFV

Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 4 page

2SC6026MFV

2005-06-28

3

IC - VCE

0

20

40

60

80

100

120

0

1

23

45

6

7

COMMON EMITTER　Ta = 25°C

IB = 0.1 mA

0.2

0.3

0.5

2.0

1.5

1.0

0.7

IB - VBE

0.1

1

10

100

1000

0

0.2

0.4

0.6

0.8

1

1.2

1.4

COMMON EMITTER

VCE = 6V

25

-25

VCE(sat) - IC

0.01

0.1

1

0.1

1

10

100

1000

COMMON EMITTER

IC/IB = 10

25

-25

VBE(sat) - IC

0.1

1

10

0.1

1

10

100

1000

COMMON EMITTER

IC/ IB = 10

25

-25

hFE - IC

10

100

1000

0.1

1

10

100

1000

COMMON EMITTER

VCE = 6 V

VCE = 1 V

25

-25

COLLECTOR CURRENT IC (mA)

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR-EMITTER VOLTAGE VCE (V)

PC - Ta

0

50

100

150

200

250

0

50

100

150

200

AMBIENT TEMPERATURE Ta (°C)

Mounted on FR4 board

(24.5 mm × 24.5 mm × 1.6 mmt)

Ta = 100°C

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2SC6026MFV Datasheet(PDF) 3 Page - Toshiba Semiconductor

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