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M14C04-WS21 Datasheet(PDF) 11 Page - STMicroelectronics |
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M14C04-WS21 Datasheet(HTML) 11 Page - STMicroelectronics |
11 / 13 page 11/13 M14C16, M14C04 Table 9. Ordering Information Scheme Example: M14C04 - W D20 Memory Capacity Delivery Form 16 16 Kbit D20 Module on Super 35 mm film 04 4 Kbit W2 Unsawn wafer (275 µm ± 25 µm thickness) W4 Unsawn wafer (180 µm ± 15 µm thickness) Operating Voltage W 2.5 V to 5.5 V S2x Sawn wafer (275 µm ± 25 µm thickness) S4x Sawn wafer (180 µm ± 15 µm thickness) where “x” indicates the sawing orientation, as follows (and as shown in Figure 11) 1 GND at top right 2 GND at bottom right 3 GND at bottom left 4 GND at top left ORDERING INFORMATION Devices are shipped from the factory with the memory content set at all ‘1’s (FFh). The notation used for the device number is as shown in Table 9. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. Sawn wafers are scribed and mounted in a frame on adhesive tape. The orientation is defined by the position of the GND pad on the die, viewed with active area of product visible, relative to the notch- es of the frame (as shown in Figure 11). The orien- tation of the die with respect to the plastic frame notches is specified by the Customer. One further concern, when specifying devices to be delivered in this form, is that wafers mounted on adhesive tape must be used within a limited pe- riod from the mounting date: – two months, if wafers are stored at 25°C, 55% relative humidity – six months, if wafers are stored at 4°C, 55% rel- ative humidity |
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