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RN2107MFV Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN2107MFV
Description  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2107MFV Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN2107MFV
∼RN2109MFV
2005-03-30
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = −50 V, IE = 0
―
―
−100
nA
Collector cutoff
current
RN2107MFV~
2109MFV
ICEO
―
VCE = −50 V, IB = 0
―
―
−500
nA
RN2107MFV
VEB = −6 V, IC = 0
−0.081
―
−0.15
RN2108MFV
VEB = −7 V, IC = 0
−0.078
―
−0.145
Emitter cutoff current
RN2109MFV
IEBO
―
VEB = −15 V, IC = 0
−0.167
―
−0.311
mA
RN2107MFV
80
―
―
RN2108MFV
80
―
―
DC current gain
RN2109MFV
hFE
―
VCE = −5 V,
IC = −10 mA
70
―
―
―
Collector-emitter
saturation voltage
RN2107MFV~
2109MFV
VCE (sat)
―
IC = −5 mA,
IB = −0.25 mA
―
−0.1
−0.3
V
RN2107MFV
−0.7
―
−1.8
RN2108MFV
−1.0
―
−2.6
Input voltage (ON)
RN2109MFV
VI (ON)
―
VCE = −0.2 V,
IC = −5 mA
−2.2
―
−5.8
V
RN2107MFV
−0.5
―
−1.0
RN2108MFV
−0.6
―
−1.16
Input voltage (OFF)
RN2109MFV
VI (OFF)
―
VCE = −5 V,
IC = −0.1 mA
−1.5
―
−2.6
V
Collector output
capacitance
RN2107MFV~
2109MFV
Cob
―
VCB = −10 V, IE = 0,
f = 1 MHz
―
0.9
―
pF
RN2107MFV
7
10
13
RN2108MFV
15.4
22
28.6
Input resistor
RN2109MFV
R1
―
―
32.9
47
61.1
k
Ω
RN2107MFV
0.17
0.213
0.255
RN2108MFV
0.374
0.468
0.562
Resistor ratio
RN2109MFV
R1/R2
―
―
1.71
2.14
2.56
―


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