M58BW016FB7ZA3FF datasheet(1/70 Pages) NUMONYX

Part #	M58BW016FB7ZA3FF

Description	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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1 / 70 page

March 2008

Rev 17

1/70

1

M58BW016DB M58BW016DT

M58BW016FT M58BW016FB

16 Mbit (512 Kbit x 32, boot block, burst)

3 V supply Flash memories

Features

■ Supply voltage

–VDD = 2.7 V to 3.6 V for program, erase

and read

–VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O

buffers

–VPP = 12 V for fast program (optional)

■ High performance

– Access times: 70, 80 ns

– 56 MHz effective zero wait-state burst read

– Synchronous burst read

– Asynchronous page read

■ Hardware block protection

–WP pin for write protect of the 4 outermost

parameter blocks and all main blocks

–RP pin for write protect of all blocks

■ Optimized for FDI drivers

– Fast program / erase suspend latency

time < 6 µs

– Common Flash interface

■ Memory blocks

– 8 parameters blocks (top or bottom)

– 31 main blocks

■ Low power consumption

– 5 µA typical deep power-down

– 60 µA typical standby for M58BW016DT/B

150 µA typical standby for M58BW016FT/B

– Automatic standby after asynchronous read

■ Electronic signature

– Manufacturer code: 20h

– Top device code: 8836h

– Bottom device code: 8835h

■ 100 K write/erase cycling + 20 years data

retention (minimum)

■ High reliability level with over 1 M write/erase

cycling sustained

■ ECOPACK® packages available

PQFP80 (T)

LBGA80 10 × 12 mm

LBGA

www.numonyx.com

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Similar Description - M58BW016FB7ZA3FF

Manufacturer	Part #	Datasheet	Description
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M58BW016FB7ZA3FF Datasheet(PDF) 1 Page - Numonyx B.V

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