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M58BW16FB5ZA3F Datasheet(PDF) 1 Page - Numonyx B.V |
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M58BW16FB5ZA3F Datasheet(HTML) 1 Page - Numonyx B.V |
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1 / 87 page  Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. March 2008 Rev 5 1/87 1 M58BW16F M58BW32F 16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories Features ■ Supply voltage –VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) –VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance – Access times: 45 and 55 ns – Synchronous burst reads – 75 MHz effective zero wait-state burst read – Asynchronous page reads ■ M58BW32F memory organization: – Eight 64 Kbit small parameter blocks – Four 128 Kbit large parameter blocks – Sixty-two 512 Kbit main blocks ■ M58BW16F memory organization: – Eight 64 Kbit parameter blocks – Thirty-one 512 Kbit main blocks ■ Hardware block protection –WP pin to protect any block combination from Program and Erase operations –PEN signal for Program/Erase Enable ■ Irreversible modify protection (OTP like) on 128 Kbits: – Block 1 (bottom device) or block 72 (top device) in the M58BW32F – Blocks 2 and 3 (bottom device) or blocks 36 and 35 (top device) in the M58BW16F ■ Security – 64-bit unique device identifier (UID) ■ Fast programming – Write to buffer and program capability ■ Optimized for FDI drivers – Common Flash interface (CFI) – Fast Program/Erase Suspend feature in each block ■ Low power consumption – 100 µA typical Standby current ■ Electronic signature – Manufacturer code: 0020h – Top device codes: M58BW32FT: 8838h M58BW16FT: 883Ah – Bottom device codes: M58BW32FB: 8837h M58BW16FB: 8839h ■ Automotive device grade 3: – Temperature: –40 to 125 °C – Automotive grade certified LBGA LBGA80 (ZA) 10 x 8 ball array PQFP80 (T) www.numonyx.com |
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