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M29W640GL70NB6F Datasheet(PDF) 1 Page - Numonyx B.V |
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M29W640GL70NB6F Datasheet(HTML) 1 Page - Numonyx B.V |
1 / 90 page March 2008 Rev 5 1/90 1 M29W640GH M29W640GL M29W640GT M29W640GB 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory Feature ■ Supply Voltage –VCC = 2.7 to 3.6 V for Program/Erase/Read –VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 words – Page Access: 25 ns – Random Access: 60 ns, 70 ns, 90 ns ■ Fast Program commands – 2 word/4 byte Program (without VPP=12 V) – 4 word/8 byte Program (with VPP=12 V) – 16 word/32 byte Write Buffer ■ Programming time – 10 µs per byte/word typical – Chip Program time: 10 s (4-word Program) ■ Memory organization – M29W640GH/L: 128 main blocks, 64 Kbytes each – M29W640GT/B Eight 8 Kbytes Boot blocks (top or bottom) 127 Main blocks, 64 Kbytes each ■ Program/Erase controller – Embedded byte/word program algorithms ■ Program/Erase Suspend and Resume – Read from any block during Program Suspend – Read and Program another block during Erase Suspend ■ ECOPACK® packages ■ 128 word Extended Memory block – Extra block used as security block or to store additional information ■ Low power consumption:Standby and Automatic Standby ■ Unlock Bypass Program command – Faster Production/Batch Programming ■ Common Flash Interface: 64-bit Security Code ■ VPP/WP pin for Fast Program and Write Protect ■ Temporary Block Unprotection mode ■ 100,000 Program/Erase cycles per block ■ Electronic Signature – Manufacturer Code: 0020h – Device code (see Table 1) FBGA TSOP56 (NB) 14 x 20mm(1 ) TBGA64 (ZF) 10 x 13mm(1) TSOP48 (NA) 12 x 20mm TFBGA48 (ZA) 6 x 8mm FBGA 1. Packages only available upon request. Table 1. Device summary Root Part Number Device code M29W640GH: Uniform, last block protected by VPP/WP 227Eh + 220Ch + 2201h M29W640GL: Uniform, first block protected by VPP/WP 227Eh + 220Ch + 2200h M29W640GT: Top Boot Blocks 227Eh + 2210h + 2201h M29W640GB: Bottom Boot Blocks 227Eh + 2210h + 2200h www.numonyx.com |
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