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M29W320DB90N1 Datasheet(PDF) 1 Page - Numonyx B.V |
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M29W320DB90N1 Datasheet(HTML) 1 Page - Numonyx B.V |
1 / 56 page March 2008 Rev 10 1/56 1 M29W320DT M29W320DB 32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory Feature summary ■ Supply Voltage –VCC = 2.7V to 3.6V for Program, Erase and Read –VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 67 memory blocks – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 64 Main Blocks ■ Program/Erase controller – Embedded Byte/Word Program algorithms ■ Erase Suspend and Resume modes – Read and Program another Block during Erase Suspend ■ Unlock Bypass Program command – Faster Production/Batch Programming ■ VPP/WP pin for Fast Program and Write Protect ■ Temporary Block Unprotection mode ■ Common Flash Interface – 64 bit Security code ■ Low power consumption – Standby and Automatic Standby ■ 100,000 Program/Erase cycles per block ■ Electronic Signature – Manufacturer Code: 0020h – Top Device Code M29W320DT: 22CAh – Bottom Device Code M29W320DB: 22CBh ■ ECOPACK® packages available FBGA TSOP48 (N) 12 x 20mm TFBGA48 (ZE) www.numonyx.com |
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