M29DW640F90ZE6E datasheet(7/74 Pages) NUMONYX

Part #	M29DW640F90ZE6E

Description	64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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M29DW640F

Summary description

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Summary description

The M29DW640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,

erased and reprogrammed. These operations can be performed using a single low voltage

(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

The device features an asymmetrical block architecture, with 16 parameter and 126 main

blocks, divided into four Banks, A, B, C and D, providing multiple Bank operations. While

programming or erasing is underway in one group of banks (from 1 to 3), reading can be

conducted in any of the other banks. The bank architecture is summarized in

Table 2. Eight

of the Parameter Blocks are at the top of the memory address space, and eight are at the

bottom.

The M29DW640F has one extra 256 Byte block (Extended Block) that can be accessed

using a dedicated command. The Extended Block can be protected and so is useful for

storing security information. However the protection is irreversible, once protected the

protection cannot be undone.

Each block can be erased independently, so it is possible to preserve valid data while old

data is erased. The blocks can be protected to prevent accidental Program or Erase

commands from modifying the memory. Program and Erase commands are written to the

Command Interface of the memory. An on-chip Program/Erase Controller simplifies the

process of programming or erasing the memory by taking care of all of the special

operations that are required to update the memory contents. The end of a program or erase

operation can be detected and any error conditions identified. The command set required to

control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the

memory. They allow simple connection to most microprocessors, often without additional

logic.

The memory is offered in TSOP48 (12x20mm), and TFBGA48 (6x8mm, 0.8mm pitch)

packages.

In order to meet environmental requirements, Numonyx also offers the in ECOPACK®

packages. ECOPACK packages are Lead-free. The category of second Level Interconnect

is marked on the package and on the inner box label, in compliance with JEDEC Standard

JESD97. The maximum ratings related to soldering conditions are also marked on the inner

box label.

The memory is supplied with all the bits erased (set to ’1’).

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Similar Description - M29DW640F90ZE6E

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	M29DW640D	945Kb / 55P	64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
STMicroelectronics	M29W640FT	478Kb / 72P	64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
Numonyx B.V	M29W640FT	1Mb / 71P	64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
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Numonyx B.V	M29W640GH	1Mb / 90P	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
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