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IS41LV16100-60TLI Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS41LV16100-60TLI Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 23 page IIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1 Rev. L 12/22/05 IS41C16100 IS41LV16100 ISSI® Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. FEATURES • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: — 5V ± 10% (IS41C16100) — 3.3V ± 10% (IS41LV16100) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40oC to 85oC • Lead-free available DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100idealforusein16-bitand32-bitwidedatabussystems. ThesefeaturesmaketheIS41C16100andIS41LV16100ideallysuited for high-bandwidth graphics, digital signal processing, high- performance computing systems, and peripheral applications. The IS41C16100 and IS41LV16100 are packaged in a 42-pin 400- milSOJand400-mil50-(44-)pinTSOP(TypeII).Thelead-free400- mil 50- (44-) option is available too. 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE KEY TIMING PARAMETERS Parameter -50 -60 Unit Max. RAS Access Time (tRAC) 5060ns Max. CAS Access Time (tCAC) 1315ns Max. Column Address Access Time (tAA) 2530ns Min. EDO Page Mode Cycle Time (tPC) 2025ns Min. Read/Write Cycle Time (tRC) 84 104 ns PIN CONFIGURATIONS 50(44)-Pin TSOP (Type II) 42-Pin SOJ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND PIN DESCRIPTIONS A0-A9 Address Inputs I/O0-15 Data Inputs/Outputs WE Write Enable OE Output Enable RAS Row Address Strobe UCAS Upper Column Address Strobe LCAS Lower Column Address Strobe Vcc Power GND Ground NC No Connection December 2005 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC NC WE RAS NC NC A0 A1 A2 A3 VCC GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND |
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