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L272 Datasheet(PDF) 3 Page - STMicroelectronics |
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L272 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vs Supply Voltage 28 V Vi Input Voltage Vs Vi Differential Input Voltage ± Vs Io DC Output Current 1 A Ip Peak Output Current (non repetitive) 1.5 A Ptot Power Dissipation at: Tamb = 80 °C (L272), Tamb = 50°C (L272M), Tcase = 90 °C (L272D) Tcase = 75 °C (L272) 1.2 5 W W Top Operating Temperature Range (L272D) – 40 to 85 °C Tstg, Tj Storage and Junction Temperature – 40 to 150 °C ELECTRICAL CHARACTERISTICS (VS = 24V, Tamb = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Vs Supply Voltage 4 28 V Is Quiescent Drain Current VO = VS 2 Vs = 24V Vs = 12V 8 7.5 12 11 mA mA Ib Input Bias Current 0.3 2.5 µA Vos Input Offset Voltage 15 60 mV Ios Input Offset Current 50 250 nA SR Slew Rate 1 V/ µs B Gain-bandwidth Product 350 kHz Ri Input Resistance 500 k Ω Gv O. L. Voltage Gain f = 100Hz f = 1kHz 60 70 50 dB dB eN Input Noise Voltage B = 20kHz 10 µV IN Input Noise Current B = 20kHz 200 pA CRR Common Mode Rejection f = 1kHz 60 75 dB SVR Supply Voltage Rejection f = 100Hz, RG = 10k Ω, VR = 0.5V Vs = 24V Vs = ± 12V Vs = ± 6V 54 70 62 56 dB Vo Output Voltage Swing Ip = 0.1A Ip = 0.5A 21 23 22.5 V V Cs Channel Separation f = 1 kHz; RL =10 Ω, Gv = 30dB Vs = 24V Vs = ± 6V 60 60 dB d Distortion f = 1kHz, Gv = 3 dB, Vs = 24V, RL = ∞ 0.5 % Tsd Thermal Shutdown Junction Temperature 145 °C THERMAL DATA Symbol Parameter Powerdip SO16 Minidip Unit Rth j-case Thermal Resistance Junction-pins Max. 15 – * 70 oC/W Rth j-amb Thermal Resistance Junction-ambient Max. 70 – 100 oC/W Rth j-alumina Thermal Resistance Junction-alumina Max. – ** 50 – oC/W * Thermal resistance junction-pin 4 ** Thermal resistance junctions-pins with the chip soldered on the middle of an alumina supporting substrate measuring 15x 20mm; 0.65mm thickness and infinite heatsink. L272 3/10 |
Similar Part No. - L272_03 |
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Similar Description - L272_03 |
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