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IRHLF73214 Datasheet(PDF) 3 Page - International Rectifier |
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IRHLF73214 Datasheet(HTML) 3 Page - International Rectifier |
3 / 9 page www.irf.com 3 Pre-Irradiation IRHLF77214, 2N7610T2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil- ity. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter Up to 300K Rads(Si)1 Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 250 — V VGS = 0V, ID = 250µA VGS(th) Gate Threshold Voltage 1.0 2.0 VGS = VDS, ID = 250µA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 10V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -10V IDSS Zero Gate Voltage Drain Current — 1.0 µA VDS= 200V, VGS= 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-39) — 1.0 Ω VGS = 4.5V, ID = 2.1A VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 3.3A 1. Part numbers IRHLF77214, IRHLF73214 0 50 100 150 200 250 300 -7 -6 -5 -4 -3 -2 -1 0 VGS Kr Xe Au Table 2. Typical Single Event Effect Safe Operating Area Ion LET Energy Range VDS (V) (MeV/(mg/cm 2)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 0V -1V -2V -3V -4V -5V -6V -7V Kr 36.1 463 56 250 250 250 250 250 250 250 250 Xe 57.8 924 73.2 250 250 250 - ---- Au 88.2 1755 93.7 250 250 - - ---- |
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