Electronic Components Datasheet Search |
|
HAT2174H-EL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
HAT2174H-EL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page Rev.4.00 Dec 11, 2006 page 1 of 7 HAT2174H Silicon N Channel Power MOS FET Power Switching REJ03G0041-0400 Rev.4.00 Dec 11, 2006 Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 21 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 1 2 3 4 5 1, 2, 3 Source 4 Gate 5 Drain G D SS S 4 12 3 5 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 20 A Drain peak current ID(pulse) Note1 80 A Body-drain diode reverse drain current IDR 20 A Avalanche current IAP Note 2 20 A Avalanche energy EAR Note 2 40 mJ Channel dissipation Pch Note3 20 W Channel to Case Thermal Resistance θch-C 6.25 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25 °C, Rg ≥ 50 Ω 3. Tc = 25 °C |
Similar Part No. - HAT2174H-EL-E |
|
Similar Description - HAT2174H-EL-E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |