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STS9D8NH3LL Datasheet(PDF) 5 Page - STMicroelectronics |
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STS9D8NH3LL Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STS9D8NH3LL Electrical characteristics 5/14 Table 6. Switching times Symbol Parameter Test conditions Type Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=15 V, ID=4 A, RG=4.7 Ω, VGS= 4.5 V (see Figure 27) Q1 Q2 Q1 Q2 12 8.2 14.5 6 ns ns ns ns td(off) tf Turn-off delay time Fall time VDD=15 V, ID=4 A, RG=4.7 Ω, VGS= 4.5V (see Figure 27) Q1 Q2 Q1 Q2 23 27.8 8 3.6 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Type Min Typ. Max Unit ISD Source-drain current VDD=15 V, ID=4 A RG=4.7 Ω, VGS=4.5 V Q1 Q2 8 9 A A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) VDD=15 V, ID= 4A RG=4.7 Ω, VGS=4.5 V Q1 Q2 32 36 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 8 A, VGS = 0 Q1 Q2 1.5 1.5 V V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, VDD = 15 V di/dt = 100 A/µs, Tj = 150°C (see Figure 26) Q1 Q2 Q1 Q2 Q1 Q2 15 22.8 5.7 14.9 0.76 1.3 ns ns nC nC A A |
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