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T2035H-6I Datasheet(PDF) 3 Page - STMicroelectronics |
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T2035H-6I Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page T2035H, T2050H Characteristics 3/10 Table 4. Static characteristics Symbol Test Conditions Value Unit VT (1) ITM = 28 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V Vt0 (1) Threshold voltage Tj = 150 °C MAX. 0.80 V Rd (1) Dynamic resistance Tj = 150 °C MAX. 19 m Ω IDRM IRRM (2) VDRM = VRRM Tj = 25 °C MAX. 5 µA Tj = 150 °C MAX. 6.2 mA VD/VR = 400 V (at peak mains voltage) Tj = 150 °C MAX. 5.0 VD/VR = 200 V (at peak mains voltage) Tj = 150 °C MAX. 4.0 1. for both polarities of A2 referenced to A1. 2. tp = 380 µs. Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) TO-220AB, D2PAK 1 °C/W TO-220AB Ins 1.9 Rth(j-a) Junction to ambient TO-220AB, TO-220AB Ins 60 S = 1 cm2 D2PAK 45 Figure 1. Maximum power dissipation versus on-state rms current Figure 2. On-state rms current versus case temperature 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 P(W) α=180 ° 180° IT(RMS)(A) I T(RMS) (A) 0 2 4 6 8 10 12 14 16 18 20 22 0 25 50 75 100 125 150 α=180 ° TO-220AB Insulated TO-220AB/D²PAK TC(°C) |
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