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BB506C Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # BB506C
Description  Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB506C Datasheet(HTML) 4 Page - Renesas Technology Corp

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BB506C
Rev.1.00
Jun. 27, 2005,
page 4 of 8
Main Characteristics
Typical Output Characteristics
0
5
10
15
20
25
01
2
3
4
5
01
2
3
4
5
01
2
3
45
Drain to Source Voltage VDS (V)
68 k
Ω
82 k
Ω
100 k
Ω
120 k
Ω
150 k
Ω
R G
= 180
kΩ
VG2S = 4 V
VDS = VG1
Forward Transfer Admittance
vs. Gate1 Voltage
0
10
20
30
40
50
Gate1 Voltage VG1 (V)
VG2S = 0
VDS = 5 V
VG2S =4 V
RG = 100 kΩ
f = 1 kHz
Drain Current vs. Gate1 Voltage
0
5
10
15
20
25
Gate1 Voltage VG1 (V)
VG2S = 1 V
2 V
2 V
1 V
3 V
3 V
4 V
4 V
VDS = 5 V
VG2S = 4 V
RG = 100 kΩ
Maximum Channel Power Dissipation Curve
Ambient Temperature Ta (
°C)
* Value on the glass epoxy board (50 mm
× 40 mm × 1 mm)
400
300
200
100
0
50
100
150
200
Input Capacitance vs.
Gate2 to Source Voltage
0
1
2
3
4
5
01
2
3
4
Gate2 to Source Voltage VG2S (V)
VDS = 5 V
VG1 = 5 V
RG = 100 kΩ
f = 1 MHz
Drain Current vs. Gate Resistance
0
5
10
15
20
25
10
100
1000
Gate Resistance RG (kΩ)
VDS = VG1 = 5 V
VG2S = 4 V


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