CY62128DV30
Document #: 38-05231 Rev. *H
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground
Potential ..........................................................
−0.3V to 3.9V
DC Voltage Applied to Outputs
in High-Z State[5] ....................................
−0.3V to V
CC + 0.3V
DC Input Voltage[5] ................................
−0.3V to V
CC + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Ambient
Temperature (TA)VCC
[6]
Industrial
−40°C to +85°C
2.2V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
CY62128DV30-55/70
Unit
Min.
Typ.[4]
Max.
VOH
Output HIGH Voltage
2.2 < VCC < 2.7
IOH = −0.1 mA
2.0
V
2.7 < VCC < 3.6
IOH = −1.0 mA
2.4
VOL
Output LOW Voltage
2.2 < VCC < 2.7
IOL = 0.1 mA
0.4
V
2.7 < VCC < 3.6
IOL = 2.1 mA
0.4
VIH
Input HIGH Voltage
2.2 < VCC < 2.7
1.8
VCC + 0.3
V
2.7 < VCC < 3.6
2.2
VCC + 0.3
VIL
Input LOW Voltage
2.2 < VCC < 2.7
−0.3
0.6
V
2.7 < VCC < 3.6
−0.3
0.8
IIX
Input Leakage Current
GND < VI < VCC
−1+1
µA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
−1+1
µA
ICC
VCC Operating Supply
Current
f = fMAX = 1/tRC
VCC = 3.6V,
IOUT = 0mA,
CMOS level
510
mA
f = 1 MHz
0.85
1.5
ISB1
Automatic CE Power-down
Current
− CMOS Inputs
CE1 > VCC − 0.2V, CE2 < 0.2V,
VIN > VCC − 0.2V, VIN < 0.2V,
f = fMAX (Address and Data Only),
f = 0 (OE, WE,)
L1.5
5
µA
LL
1.5
4
ISB2
Automatic CE Power-down
Current
− CMOS Inputs
CE1 > VCC − 0.2V, CE2 < 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V,
f = 0, VCC=3.6V
L1.5
5
µA
LL
1.5
4
Capacitance[7]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
8pF
COUT
Output Capacitance
8
pF
Thermal Resistance[7]
Parameter
Description
Test Conditions
SOIC TSOP I RTSOP STSOP
Unit
θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 x 4.5
inch, two-layer printed circuit
board
69
93
93
65
°C/W
θ
JC
Thermal Resistance (Junction to Case)
34
17
17
15
°C/W
Notes:
5. VIL(min.) = −2.0V for pulse durations less than 20 ns. VIH(max.) = VCC+0.75V for pulse durations less than 20 ns.
6. Full device operation requires linear ramp of VCC from 0V to VCC(min) and VCC must be stable at VCC(min) for 500 µ s.
7. Tested initially and after any design or process changes that may affect these parameters.
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