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100B47JP500X Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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100B47JP500X Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 20 page MRF5S4140HR3 MRF5S4140HSR3 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies from 400 to 500 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applica- tions in 28-volt base station equipment. • Typical Single-Carrier N-CDMA Performance @ 465 MHz: VDD = 28 Volts, IDQ = 1250 mA, Pout = 28 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 427 2.4 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 73°C, 140 W CW Case Temperature 74°C, 28 W CW RθJC 0.41 0.47 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data MRF5S4140HR3 MRF5S4140HSR3 465 MHz, 28 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs CASE 465A-06, STYLE 1 NI-780S MRF5S4140HSR3 CASE 465-06, STYLE 1 NI-780 MRF5S4140HR3 © Freescale Semiconductor, Inc., 2006. All rights reserved. |
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