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CNY17-1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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CNY17-1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 2 Rev. 1.5, 09-Nov-05 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. OUTPUT Collector emitter breakdown voltage BVCEO 70 V Emitter base breakdown voltage BVEBO 7.0 V Collector current IC 50 mA t < 1.0 ms IC 100 mA Power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector referred to climate DIN 50014, part 2, Nov. 74 t = 1.0 s VISO 5300 VRMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.25 1.65 V Breakdown voltage IR = 10 mA VBR 6.0 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz CO 25 pF Thermal resistance Rth 750 K/W OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF Collector base capacitance VCB = 5.0 V, f = 1.0 MHz CCB 6.5 pF Emitter base capacitance VEB = 5.0 V, f = 1.0 MHz CEB 7.5 pF Thermal resistance Rth 500 K/W COUPLER Collector emitter, saturation voltage VF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V Coupling capacitance CC 0.6 pF Collector emitter, leakage current VCE = 10 V CNY17-1 ICEO 2.0 50 nA CNY17-2 ICEO 2.0 50 nA CNY17-3 ICEO 5.0 100 nA CNY17-4 ICEO 5.0 100 nA |
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