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2SA1162 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SA1162 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SA1162 2003-03-27 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) · High hFE: hFE = 70~400 · Low noise: NF = 1dB (typ.), 10dB (max) · Complementary to 2SC2712 · Small package Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 ¾ ¾ -0.1 mA Emitter cut-off current IEBO VEB = -5 V, IC = 0 ¾ ¾ -0.1 mA DC current gain hFE (Note) VCE = -6 V, IC = -2 mA 70 ¾ 400 Collector-emitter saturation voltage VCE (sat) IC = -100 mA, IB = -10 mA ¾ -0.1 -0.3 V Transition frequency fT VCE = -10 V, IC = -1 mA 80 ¾ ¾ MHz Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz ¾ 4 7 pF Noise figure NF VCE = -6 V, IC = -0.1 mA, f = 1 kHz, Rg = 10 kW, ¾ 1.0 10 dB Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) |
Similar Part No. - 2SA1162_03 |
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Similar Description - 2SA1162_03 |
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