PRELIMINARY
CY7C1399D
Document #: 38-05467 Rev. *C
Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND
[2] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State[2] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[2] ................................ –0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Commercial
0
°C to +70°C
3.3V
±300 mV
Industrial
–40
°C to +85°C
3.3V
±300 mV
Electrical Characteristics Over the Operating Range
Test Conditions
7C1399D-10
7C1399D-12
Parameter
Description
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
0.4
V
VIH
Input HIGH Voltage
2.0
VCC
+0.3V
2.0
VCC
+0.3V
V
VIL
Input LOW Voltage[2]
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
–1
+1
–1
+1
µA
IOZ
Output Leakage Current
GND
≤ V
I ≤ VCC, Output Disabled
–1
+1
–1
+1
µA
IOS
Output Short Circuit Current[3] VCC = Max., VOUT = GND
–300
–300
mA
ICC
VCC Operating Supply
Current
VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC
60
50
mA
ISB1
Automatic CE Power-down
Current — TTL Inputs
Max. VCC, CE ≥ VIH,
VIN ≥ VIH, or VIN ≤ VIL,f = fMAX
10
10
mA
L10
10
mA
ISB2
Automatic CE Power-down
Current — CMOS Inputs[4]
Max. VCC, CE ≥ VCC – 0.3V, VIN ≥ VCC –
0.3V, or VIN ≤ 0.3V,
WE
≥V
CC – 0.3V or WE ≤0.3V, f = fMAX
3.0
3.0
mA
L1.2
1.2
mA
Test Conditions
7C1399D-15
Parameter
Description
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.0
VCC
+0.3V
V
VIL
Input LOW Voltage
–0.3
0.8
V
IIX
Input Load Current
–1
+1
µA
IOZ
Output Leakage Current
GND
≤ V
I ≤ VCC, Output Disabled
–1
+1
µA
IOS
Output Short Circuit Current[3] VCC = Max., VOUT = GND
–300
mA
ICC
VCC Operating Supply Current
VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC
40
mA
ISB1
Automatic CE Power-Down
Current — TTL Inputs
Max. VCC, CE ≥ VIH,
VIN ≥ VIH, or VIN ≤ VIL, f = fMAX
10
mA
L10
mA
ISB2
Automatic CE Power-Down
Current — CMOS Inputs[4]
Max. VCC, CE ≥ VCC–0.3V, VIN ≥ VCC –
0.3V, or VIN ≤ 0.3V, WE≥VCC–0.3V or
WE
≤ 0.3V, f=f
MAX
3.0
mA
L1.2
mA
Notes:
2. VIL (min.) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Device draws low standby current regardless of switching on the addresses.
5. Tested initially and after any design or process changes that may affect these parameters.
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