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CY7C056V
CY7C057V
Document #: 38-06055 Rev. *B
Page 5 of 23
Maximum Ratings[6]
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°C to +150°C
Ambient Temperature with
Power Applied.............................................–55
°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State............................–0.5V to VDD+0.5V
DC Input Voltage.................................. –0.5V to VDD+0.5V[7]
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
Latch-Up Current .................................................... >200 mA
Shaded areas contain advance information.
Notes:
6. The voltage on any input or I/O pin can not exceed the power pin during power-up.
7. Pulse width < 20 ns.
Pin Definitions
Left Port
Right Port
Description
A0L–A13/14L
A0R–A13/14R
Address (A0–A13 for 16K; A0–A14 for 32K devices)
SEML
SEMR
Semaphore Enable
CE0L, CE1L
CE0R, CE1R
Chip Enable (CE is LOW when CE0 ≤ VIL and CE1 ≥ VIH)
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
I/O0L–I/O35L
I/O0R–I/O35R
Data Bus Input/Output
OEL
OER
Output Enable
R/WL
R/WR
Read/Write Enable
B0–B3
Byte Select Inputs. Asserting these signals enables read and write opera-
tions to the corresponding bytes of the memory array.
BM, SIZE
See Bus Matching for details.
WA, BA
See Bus Matching for details.
M/S
Master or Slave Select
VSS
Ground
VDD
Power
Operating Range
Range
Ambient
Temperature
VDD
Commercial
0
°C to +70°C
3.3V ± 165 mV
Industrial
–40
°C to +85°C
3.3V ± 165 mV
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